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IEEE Transactions on Electron Devices
Results: 26

#	Item
11	696 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, NO. 3, MARCH 2015 Atomic Level Modeling of Extremely Thin Silicon-on-Insulator MOSFETs Including Add to Reading List Source URL: yangtze.hku.hk Language: English - Date: 2015-04-21 18:39:08 Emerging technologies Nanomaterials MOSFET Silicon dioxide Amorphous silicon Electronic band structure Quantum dot Crystal Nanowire Chemistry Physics Materials science
12	1108 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 4, APRIL 2011 Linear–Logarithmic CMOS Pixel With Tunable Dynamic Range Add to Reading List Source URL: www.iris.sssup.it Language: English - Date: 2014-12-25 16:36:26 Electronic engineering Image sensors Noise Active pixel sensor Wide dynamic range Photodiode CMOS Fixed-pattern noise Image sensor Digital photography Electronics Optics
13	IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, NO. 7, JULY[removed]Model Order Reduction for Multiband Quantum Transport Simulations and its Application to Add to Reading List Source URL: yangtze.hku.hk Language: English - Date: 2013-09-27 06:35:42 Nanowire Quantum mechanics Emerging technologies MOSFET Threshold voltage Transistor Carbon nanotube field-effect transistor Gallium nitride Multigate device Physics Chemistry Nanoelectronics
14	IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 2, FEBRUARY[removed]Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Add to Reading List Source URL: www.pskl.ust.hk Language: English - Date: 2014-10-10 02:44:38 Dietary minerals Reducing agents Ceramic materials Zinc oxide Oxide thin film transistor Thin-film transistor Gallium nitride Boron Doping Chemistry Inorganic compounds Chemical elements
15	IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 4, APRIL[removed]The Resistivity of Zinc Oxide Under Different Annealing Configurations and Its Impact on Add to Reading List Source URL: www.pskl.ust.hk Language: English - Date: 2014-10-10 02:44:41 Zinc oxide Annealing Zinc Electrical resistivity and conductivity Heat treating Center of Excellence in Nanotechnology at AIT Chemistry Ceramic materials Ultraviolet radiation
16	1764 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs Add to Reading List Source URL: www.cree.com Language: English - Date: 2014-05-08 10:01:10 Semiconductor devices Integrated circuits High electron mobility transistor Transistor Monolithic microwave integrated circuit Gallium nitride Field-effect transistor MOSFET MESFET Electronic engineering Electronics Technology
17	646 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 4, APRIL 1989 A Recessed-Gate In,.52A10.48As/n+-1%.53G%. 4 7 A ~ MIS-type FET Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:15:15 High electron mobility transistor Field-effect transistor MODFET Double heterostructure Transistor Threshold voltage MESFET Transconductance Semiconductor Electronics Technology Electromagnetism
18	1170 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 5, MAY 2008 Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Add to Reading List Source URL: doc.utwente.nl Language: English - Date: 2011-08-28 12:36:23 Semiconductor device fabrication Anions Silicide Materials science Platinum silicide Titanium disilicide Salicide MOSFET Polycrystalline silicon Chemistry Matter Silicon
19	2386 IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 36. NO. II. NOVEMBER 1989 A Floating-Gate Transmission-Line Model Technique for Measuring Source Resistance in Heterostructure Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:15:16 Semiconductor devices Field-effect transistor Contact resistance Threshold voltage Floating Gate MOSFET Transistor JFET Depletion and enhancement modes Self-aligned gate Electrical engineering Technology Electromagnetism
20	IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 3, MARCH[removed]Electron Transport in Graphene From a Diffusion-Drift Perspective Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 16:02:47 Nanomaterials Emerging technologies Superhard materials Graphene Bilayer graphene Field-effect transistor Silicon carbide Electron mobility MOSFET Chemistry Physics Materials science

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